Publications
Recent publications in top-quality international journals:
2011
X. F. Zheng, C. Robinson, W.D.Zhang, J.F.Zhang, B. Govoreanu, J. van Houdt
A new multi-pulse technique for probing electron trap energy distribution in high-κ materials for Flash memory application
IEEE Trans. Elec. Dev. Dev. accepted for publication, 2011
2010
X. F. Zheng, W. D. Zhang, B. Govoreanu, J. F. Zhang, J. van Houdt
A new multi-pulse technique for probing electron trap energy distribution in high-κ materials for Flash memory application
IEEE Trans. Elec. Dev. Dev. vol.57, No.10, pp.2484-2492
D. Ruiz Aguado, B. Govoreanu, W. D. Zhang, M. Jurczak, K. De Meyer, J. van Houdt
A novel trapping/detrapping model for defect profiling in high-k materials using the two-pulse capacitance-voltage technique
IEEE Trans. Elec. vol. 57, No. 10, pp.2726-2735
Z. Ji, L. Lin, J. F. Zhang, B. Kaczer, G. Groeseneken,
"NBTI Lifetime Prediction and Kinetics at Operation Bias Based on Ultrafast Pulse Measurement"
IEEE Trans. Electron Dev., vol. 57, No. 1, pp.22-237, 2010.
X. F. Zheng, W. D. Zhang, B. Govoreanu, D. R. Aguado, J. F. Zhang, J. Van Houdt
"Energy and Spatial Distributions of Electron Traps Throughout SiO2/Al2O3 Stacks as the IPD in Flash Memory Application"
IEEE Trans. Electron Dev., vol. 5, No. 1, pp.288-296, 2010.
2009
X. F. Zheng, W. D. Zhang, B. Govoreanu, J. F. Zhang, J. Van Houdt
"A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-κ materials for Flash memory application"
Proceeding of the International Electron Devices Meeting (IEDM), Baltimore, Dec. 7-9, 2009.
Z. Ji, J. F. Zhang, W. D. Zhang, G. Groeseneken, L. Pantisano, S. De Gendt, M. M. Heyns
"An assessment of the mobility degradation induced by remote charge scattering"
Applied Physics Letters, 95, Art.no. 263502, 2009.
M. H. Chang, C. Z. Zhao, Z. Ji, J. F. Zhang, G. Groeseneken, L. Pantisano, S. De Gendt, M. M. Heyns
“On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks,”
J. Appl. Phys., vol. 105, Art.no. 054505, 2009.
Z. Ji, J. F. Zhang, M. H. Chang, B. Kaczer, and G. Groeseneken
“An analysis of the NBTI-induced threshold voltage shift evaluated by different techniques”
IEEE Trans. Electron Dev., vol. 56, No. 5, pp.1086-1093, 2009.
J. F. Zhang (Invited)
“Defects and Instabilities in Hf-dielectric/SiON stacks”
Microelectronic Eng., vol. 86, No. 7-9, pp.1883-1887, 2009.
X. F. Zheng, W. D. Zhang, B. Govoreanu, J. F. Zhang, J. Van Houdt
“Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells”
Microelectronic Eng., vol.6, No.7-9, pp.1834-1837, 2009.
2008
J. F. Zhang, M. H. Chang, Z. Ji, L. Lin, I. Ferain, G. Groeseneken, L. Pantisano, S. De Gendt, and M. M. Heyns,
“Dominant layer for stress-induced positive charges in Hf-based gate stacks,”
IEEE Electron Device Letters, vol. 29, pp.1360-1363, 2008.
W. D. Zhang, B. Govoreanu , X. F. Zheng, D. Ruiz Aguado, M. Rosmeulen, P. Blomme, J. F. Zhang, J. Van Houdt,
“Two-pulse C-V: A new method for characterizing electron traps in the bulk of SiO2/high-k dielectric stacks,”
IEEE Electron Device Letters, vol.29, no. 9, pp1043-1046, 2008.
J. F. Zhang, C. Z. Zhao, M. H. Chang, M. B. Zahid, A. R. Peaker, S. Hall, G. Groeseneken, L. Pantisano, S. De Gendt, and M.Heyns
“Impact of different defects on the kinetics of negative bias temperature instability of hafnium stacks,”
Applied Physics Letters, 92, Art.no. 013502, 2008.
C. Z. Zhao, J. F. Zhang, M. H. Chang, A. R. Peaker, S. Hall, G. Groeseneken, L. Pantisano, S. De Gendt, and M.Heyns,
“Process-induced positive charges in Hf-based gate stacks,”
J. Appl. Phys., 103, Art. No. 014507, 2008.
C. Z. Zhao, J. F. Zhang, M. H. Chang, A. R. Peaker, S. Hall, G. Groeseneken, L. Pantisano, S. De Gendt, and M. Heyns,
“Stress-induced positive charge in Hf-based gate dielectrics: impact on device performance and a framework for the defect,”
IEEE Trans. Electron Dev., vol.55, no.7, pp.1647-1656, 2008.
E. Efthymiou, S. Bernardini, J. F. Zhang, S. N. Volkos, B. Hamilton, A. R. Peaker
“Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment,”
THIN SOLID FILMS, vol. 517, Issue: 1, pp. 207-208, 2008.
2007
C. Z. Zhao, M. B. Zahid, J. F. Zhang, G. Groeseneken, R. Degraeve, and S. De Gendt
“Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with Hafnium based dielectrics”
Applied Physics Letters, 90, Art.no.143502, 2007
J. F. Zhang, M. H. Chang, and G. Groeseneken
“Effects of measurement temperature on NBTI”
IEEE Electron Dev.Lett., Vol.28, No.4, pp.298-300, 2007
M. H. Chang and J. F. Zhang
“On positive charges formed under negative bias temperature stresses”
J.Appl.Phys., 101, Art.no.024516, 2007
Y. Lu, S. Hall, O. Buiu, and J. F. Zhang
“Real-time observation of charging dynamics in hafnium silicate films using MOS capacitance transients,”
Microelectronic Eng., Vol.84, pp.2390-2393, 2007.
E. Efthymiou, S. Bernardini, S. N. Volkos, B. Hamilton, J. F. Zhang, H. J. Uppal, and A. R. Peaker,
“Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks,”
Microelectronic Eng., Vol.84, pp.2290-2293, 2007.
M. B. Zahid, R. Degraeve, J. F. Zhang, G. Groeseneken
“Impact of Process Conditions on Interface and High-k Trap Density Investigated by Variable Tcharge-Tdischarge Charge Pumping (VT2CP)”
Microelectronic Eng., Vol.84, pp.1951-1955, 2007.
C. Z. Zhao, J. F. Zhang, M. B. Zahid, E. Efthymiou, Y. Lu, S. Hall, A. R. Peaker, Groeseneken, L. Pantisano, R. Degraeve, S. De Gendt, and M.Heyns,
“Hydrogen induced positive charge in Hf-based dielectrics”
Microelectronic Eng., Vol.84, pp.2354-2357, 2007.
2006
C. Z. Zhao, J. F. Zhang, M. B. Zahid, B. Govoreanu, G. Groeseneken, and S. De Gendt
“Determination of capture cross sections for as-grown electron traps in HfO2/HfSiO stacks”
J. Appl. Phys., 100, Art. No.093716, 2006.
C. Z. Zhao, J. F. Zhang, M. B. Zahid, G. Groeseneken, R. Degraeve, and S. De Gendt
“Impact of gate materials on positive charge formation in HfO2/SiO2 stacks”
Applied Physics Letters, 89, Art.No. 023507, 2006
J. F. Zhang, C. Z. Zhao, M. B. Zahid, G. Groeseneken, R. Degraeve, and S. De Gendt
“An assessment of the location of as-grown electron traps in HfO2/HiSiO stacks”
IEEE Electron Dev.Lett., vol.27, no.10, pp.817-820, 2006.
W. D. Zhang, J. F. Zhang, C. Z. Zhao, M. H. Chang, G. Groeseneken and R. Degraeve
“Electrical signature of the defect associated with gate oxide breakdown”
IEEE Electron Dev.Lett., vol.27, no.5, pp.393-395, 2006.
M. H. Chang, J. F. Zhang, and W. D. Zhang
“Assessment of capture cross sections and effective density of electron traps generated in silicon dioxides”
IEEE Trans. Electron Dev., vol.53, no.6, pp.1347-1354, 2006.
2005
C. Z. Zhao, M. B. Zahid, J. F. Zhang, G. Groeseneken, R. Degraeve, and S. De Gendt
“Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks”
Microelectronic Engineering, vol.80, pp.366-369, 2005.
Y. G. Wang, M. Z. Xu, C. H. Tan, J. F. Zhang, X. R. Duan
“The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses”
Chinese Physics, vol.14, pp.1886-1891, 2005
C. Z. Zhao and J. F. Zhang
“Effects of hydrogen on positive charges in gate oxides”
J.Appl.Phys. 97 art. no. 073703, 2005.
2004
M. H. Chang and J. F. Zhang
“On the role of hydrogen in hole-induced electron trap creation”
Semiconductor Sci. and Technology, vol.19, pp.1333-1338, 2004.
C. Z. Zhao, J. F. Zhang, G. Groeseneken and R. Degraeve
“Hole traps in silicon dioxides --- Part II: Generation mechanism”
IEEE Trans. Electron Dev., vol.51, no.8, pp.1274-1280, 2004.
J. F. Zhang, C. Z. Zhao, A. H. Chen, G. Groeseneken and R. Degraeve
“Hole traps in silicon dioxides --- Part I: Properties”
IEEE Trans. Electron Dev., vol.51, no.8, pp.1267-1273, 2004.
J. F. Zhang, H. K. Sii, A. H. Chen, C. Z. Zhao, M. J. Uren, G. Groeseneken and R. Degraeve
“Hole trap generation in gate dielectric during substrate hole injection”
Semiconductor Sci. and Technology, vol.19, no.1, pp.L1-L3, 2004.
2003
J. F. Zhang, C. Z. Zhao, G. Groeseneken, and R. Degraeve
“Analysis of the kinetics for interface state generation following hole injection”
J.Appl.Phys., vol.93, no.10, pp.6107-6116, 2003
W. D. Zhang, J. F. Zhang, M. J. Lalor, D. R. Burton, G. Groeseneken and R. Degraeve
“Effects of detrapping on electron traps generated in gate oxides”
Semiconductor Sci. and Technology, vol.18, 174-182, 2003
2002
W. D. Zhang, J. F. Zhang, M. Lalor, D. Burton, G. Groeseneken, and R. Degraeve
“Two types of neutral electron traps generated in the gate silicon dioxide”
IEEE Trans. Electron Dev., vol.49, no.11, 1868-1875, 2002
J. F. Zhang, C. Z. Zhao, G. Groeseneken, R. Degraeve, J. N. Ellis, and C. D. Beech
“Relation between hole traps and hydrogenous species in silicon dioxides”
Solid-State Electronics, vol.46, no.11, 1839-1847, 2002
2001
J. F. Zhang, C. Z. Zhao, G. Groeseneken, R. Degraeve, J. N. Ellis, and C. D. Beech
“Relation between hole traps and non-reactive hydrogen induced positive charges”
Microelectronic Eng., vol.59, no.1, pp.67-72, 2001
W. D. Zhang, J. F. Zhang, M. J. Uren, G. Groeseneken, R. Degraeve, M. Lalor and D. Burton
“Dependence of energy distributions of interface states on stress conditions”
Microelectronic Eng., vol.59, no.1, pp.95-99, 2001
W. D. Zhang, J. F. Zhang, M. Lalor, D. Burton, G. Groeseneken, and R. Degraeve
“On the mechanism of electron trap generation in gate oxides”
Microelectronic Eng., vol.59, no.1, pp.89-94, 2001
W. D. Zhang, J. F. Zhang, M. J. Uren, G. Groeseneken, R. Degraeve, M. Lalor, and D. Burton
“On the interface states generated under different stress conditions”
Appl.Phys.Lett., vol.79, no.19, 3092-3094, 2001
J. F. Zhang, C. Z. Zhao, G. Groeseneken, R. Degraeve, J. N. Ellis, and C. D. Beech
“Hydrogen induced positive charge generation in gate oxides”
J.Appl.Phys., vol.90, no.4, pp.1911-1919, 2001
J. F. Zhang, H. K. Sii, G. Groeseneken, and R. Degraeve
“Hole trapping and trap generation in the gate silicon dioxide”
IEEE Trans. Electron Dev., vol.48, no.6, pp.1127-1135, 2001
C. Z. Zhao, J. F. Zhang, G. Groeseneken, R. Degraeve, J. N. Ellis, and C. D. Beech
“Mobile protons in the gate oxide and their potentials and problems in application for non-volatile memory devices”
IEE Electronics Letters, vol.37, no.11, pp.716-717, 2001
C. Z. Zhao, J. F. Zhang, G. Groeseneken, R. Degraeve, J. N. Ellis, and C. D. Beech
“Interface state generation post-hole injection”
J.Appl.Phys., vol.90, no.1, pp.328-336, 2001
Selected Journal papers before 2001:
Zhang JF, Sii HK, Degraeve R, et al.
Mechanism for the generation of interface state precursors
JOURNAL OF APPLIED PHYSICS 87 (6): 2967-2977 MAR 15 2000
Zhang JF, Sii HK, Groeseneken G, et al.
Degradation of oxides and oxynitrides under hot hole stress
IEEE TRANSACTIONS ON ELECTRON DEVICES 47 (2): 378-386 FEB 2000
Tan RHG, Zhang JF, Morgan R, et al.
Still image compression based on 2D discrete wavelet transform
ELECTRONICS LETTERS 35 (22): 1934-1935 OCT 28 1999
Sii HK, Zhang JF, Degraeve R, et al.
Relation between hydrogen and the generation of interface state precursors
MICROELECTRONIC ENGINEERING 48 (1-4): 135-138 SEP 1999
J.F.Zhang (Invited)
“Traps”
Wiley Encyclopedia of Electrical and Electronics Eng., Vol.22, 540-546, 1999
Zhang JF, Al-kofahi IS, Groeseneken G
Behavior of hot hole stressed SiO2/Si interface at elevated temperature, JOURNAL OF APPLIED PHYSICS 83 (2): 843-850 JAN 15 1998
Zhang JF, Eccleston W
Positive bias temperature instability in MOSFET's
IEEE TRANSACTIONS ON ELECTRON DEVICES 45 (1): 116-124 JAN 1998
AlKofahi IS, Zhang JF, Groeseneken G
Generation and annealing of hot hole induced interface states
MICROELECTRONIC ENGINEERING 36 (1-4): 227-230 JUN 1997
Alkofahi IS, Zhang JF, Groeseneken G
Continuing degradation of the SiO2/Si interface after hot hole stress
JOURNAL OF APPLIED PHYSICS 81 (6): 2686-2692 MAR 15 1997
I.S.Goh, J.F.Zhang, S.Hall, W.Eccleston, and K.Werner,
“Electrical Properties of Plasma-grown Oxide on MBE-grown SiGe”
Semicond. Sci. Technol., 10, 818-828, 1995
J.F.Zhang and W.Eccleston
"Effects of high field injection on the hot carrier induced degradation of submicron pMOSFET’s"
IEEE Trans. Electron Devices, 42(7), 1269-1276, 1995
I.S.Goh, J.F.Zhang, S.Hall, W.Eccleston and K.Werner
"Plasma Oxidation of Si and SiGe"
Microelectronic Eng., 28, 221-224, 1995
I.S.Goh, J.F.Zhang, S.Hall, W.Eccleston, and K.Werner,
“Improvement in Interface Quality of Plasma Grown Oxide on SiGe”,
IEE Electronic Letters, 30(23), 1988-1989, 1994
J.F.Zhang and W.Eccleston
"Donor-like interface trap generation in pMOSFETs at room temperature"
IEEE Trans. Electron Devices, 41(5), 740-744, 1994
J.F.Zhang, S.Taylor, W.Eccleston, and K.Barlow
"Recovery of Submicrometer pMOSFETs From The Hot Carrier Degradation by High Field Injection"
IEE Electronics Letters, Vol.29, No.12, 1097-1099, 1993
S.Taylor, J.F.Zhang, and W.Eccleston
"A Review of The Plasma Oxidation of Silicon and Its Applications"
Semicond. Sci. Technol., Vol.8, No.7, 1426-1433, 1993
J.F.Zhang, S.Taylor, and W.Eccleston
"Electron Trap Generation in Thermally Grown Silicon Dioxide Under Fowler-Nordheim Stress"
J.Appl.Phys., Vol.71, No.2, 725-734, 1992
J.F.Zhang, S.Taylor, and W.Eccleston
"A Quantitative Investigation of Electron Detrapping in SiO2 Under Fowler-Nordheim Stress"
J.Appl.Phys., Vol.71, No.12, 5989-5996, 1992
J.F.Zhang, S.Taylor, and W.Eccleston
"A Comparative Study of The Electron Trapping and Thermal Detrapping in SiO2 Prepared by Plasma and Thermal Oxidation"
J.Appl.Phys., Vol.72, No.4, 1429-1435, 1992
J.F.Zhang, S.Taylor, W.Eccleston, and M.Nield
"Growth and Properties of Thin SiO2 Films by Inductively Coupled Low Temperature Plasma Anodization"
Semiconductor Sci. and Tech., Vol.5, No.8, 824-830, 1990
N.L.Mattey, M.G.Dowsett, E.H.C.Parker, T.E.Whall, S.Taylor, and J.F.Zhang
"P-type Delta-doped Layers in Silicon: Structural and Electronic Properties"
Appl.Phys.Lett., 57(16), 1648-1650, 1990
J.F.Zhang, P.Watkinson, S.Taylor, and W.Eccleston
"Interface Trap Behaviour of Plasma Grown Oxides Following Low Temperature Annealing"
Applied Surface Science, Vol.39, 374-380, 1989
S.Hall, J.F.Zhang, S.Taylor, W.Eccleston, P.Beahan, G.T.Tatlock, C.J.Gibbings, C.Smith, and C.Tuppen
"Assessment of Low-temperature Plasma-grown Oxides on Si-Ge Epitaxial Layers"
Applied Surface Science, Vol.39, 57-64, 1989
R.Goswami, J.B.Butcher, R.Ginige, J.F.Zhang, S.Taylor, and W.Eccleston
"Low Temperature Gate Dielectrics Formed by Plasma Anodization of Silicon Nitride",
IEE Electronics Letters, Vol.24, No.20, 1269-70, 1988
Invited Conference papers since 2001
J. F. Zhang, M. H. Chang, Z. Ji, and W. Zhang (Invited)
“Recent progress in understanding the instability and defects in gate dielectrics,”
Proc. of The 9th International Conference on Solid-State and Integrated-Circuit Technology,
paper C3.2, Beijing, October 20-23, 2008.
J. F. Zhang, C. Z. Zhao, and M. H. Chang (Invited)
“Positive charge in Hf-based dielectric stacks”
Proc. of The 7th International Semiconductor Technology Conference, Shanghai, March, 2008.
J.F.Zhang (Invited)
“Properties of electron traps in HfO2/HfSiO stacks”
Proc. of The 6th International Semiconductor Technology Conference, pp.365-381, Shanghai, March 18-20, 2007.
M.H.Chang, Y.Wang, J.F.Zhang, C.Z.Zhao, W.D.Zhang and M.Xu (Invited)
“Contribution of As-grown hole traps to NBTI”
Proc. of the “Ninth International Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Other emerging Dielectrics”, held on occasion of the “211th Meeting of The Electrochemical Society”, pp.245-262, Chicago, May 6-11, 2007.
J. F. Zhang, C. Z. Zhao, M. H. Chang, W. Zhang, G. Groeseneken, L. Pantisano, S. De Gendt, and M. Heyns (Invited)
“Instability and defects in gate dielectrics: similarity and differences between Hf-stacks and SiO2,”
Proc. of the “Physics and Technology of high-k gate dielectrics 5”, held on occasion of the “212th Meeting of The Electrochemical Society”, pp.219-233, Washington DC, Oct 8-10, 2007.
M.H.Chang and J.F.Zhang (Invited)
“An investigation of positive charges formed during negative bias temperature stress”
Proc. of the “Eighth International Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Other emerging Dielectrics”, held on occasion of the “207th Meeting of The Electrochemical Society”, pp.293-303, Quebec City, May 16-20, 2005.
J.F.Zhang and C.Z.Zhao (Invited)
“A review of positive charge formation in gate oxides”
IEEE 7th International Conference on Solid-State and Integrated-Circuit Technology, pp.781-786, Beijing, October 18-21, 2004
J.F.Zhang (Invited)
“A review of defect generation in the SiO2 and its interface with Si”
Proc. of the “Seventh International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films”, held on occasion of the “203rd Meeting of The Electrochemical Society”, pp.262-290, Paris, April 27-May 2, 2003.
Conference papers since 2001
X. F. Zheng, W. D. Zhang, B. Govoreanu, J. F. Zhang, J. Van Houdt
"A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-κ materials for Flash memory application"
Proceeding of the International Electron Devices Meeting (IEDM), Baltimore, Dec. 7-9, 2009.
Y. Wang, J. F. Zhang, M. H. Chang, M. Xu, and C. Tan
“Characterisation of as-grown hole trapping in silicon oxynitride p-MOSFETs subjected to negative bias temperature stress,”
Proc. of The 9th International Conference on Solid-State and Integrated-Circuit Technology,
paper C3.8, Beijing, October 20-23, 2008.
J. F. Zhang, Z. Ji, M. H. Chang, B. Kaczer, and G. Groeseneken
“Real Vth instability of pMOSFETs under practical operation conditions”
Proceeding of the International Electron Devices Meeting (IEDM), pp(four pages), Washington DC, Dec. 10-12, 2007
M. B. Zahid, L. Pantisano, R. Degraeve, M. Aoulaiche, L. Trojman, I. Ferain, E. San Andres,G. Groeseneken, J. F. Zhang, M. Heyns, M. Jurczac, S. De Gendt,
“Advanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effects”
VLSI Symp., paper 3B.1, June 12-14, Kyoto, Japan, 2007.
M. B. Zahid , R. Degraeve, J. F. Zhang, G. Groeseneken
“Defects Generation in SiO2/HfO2 Studied With Variable tcharge-tdischarge Charge Pumping (VT2CP).”
Proceeding of International Reliability Physics Symposium (IRPS), pp.55-60, Pheonix, USA, 2007
J.F.Zhang and M.H.Chang
“An assessment of effective mobility variation during negative bias temperature stress”
Proc. of the “Ninth International Symposium on Silicon Nitride, Silicon Dioxide
Thin Insulating Films, and Other emerging Dielectrics”, held on occasion of the “211th Meeting of The Electrochemical Society”, pp.301-311, Chicago, May 6-11, 2007.
X.F.Zheng, W.D.Zhang, J.F.Zhang, M.H.Chang and Y.Hao
“Non-Uniform Distribution of Electron Traps Generated by Fowler-Nordheim Stress in Silicon Dioxides”
Proc. of the “Ninth International Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Other emerging Dielectrics”, held on occasion of the “211th Meeting of The Electrochemical Society”, pp.329-341, Chicago, May 6-11, 2007.
M.H.Chang, J.F.Zhang, and G.Groeseneken
“Effects of ‘on-the-fly’ measurement temperature on negative bias temperature instability”
IEEE 36th Int. Conf. Semiconductor Interface Specialist Conference (SISC), pp.4.2, Washington D.C., 2005
M.B.Zahid, R.Degraeve, T.Kauerauf, G.Groeseneken, J.F.Zhang
“Investigation of channel-length dependent time-to-breakdown (tBD) with variable frequency charge
pumping” IEEE 36th Int. Conf. Semiconductor Interface Specialist Conference (SISC), pp.4.3, Washington D.C., 2005
M.H.Chang and J.F.Zhang
“On the trapping kinetics of electron traps created in silicon dioxides”
Proc. of the “Eighth International Symposium on Silicon Nitride, Silicon Dioxide
Thin Insulating Films, and Other emerging Dielectrics”, held on occasion of the “207th Meeting of The Electrochemical Society”, pp.293-303, Quebec City, May 16-20, 2005.
C.Z.Zhao and J.F.Zhang
“On the role of hydrogen and holes in positive charge formation in gate oxides”
IEEE 35th Int. Conf. Semiconductor Interface Specialist Conference (SISC), pp.6.4, San Diego, 2004
W.D.Zhang, J.F.Zhang, C.Z.Zhao, G.Groeseneken, and R.Degraeve
“Which defect breaks down gate oxides?”
IEEE 34th Int. Conf. Semiconductor Interface Specialist Conference (SISC), pp.S7.3.1-S7.3.2, Washington D.C., 2003
C.Z.Zhao, J.F.Zhang, G.Groeseneken, and R.Degraeve
“Different types of positive charges generated near the oxide/Si interface”
IEEE 34th Int. Conf. Semiconductor Interface Specialist Conference (SISC), pp.S4.3.1-4.3.2, Washington D.C., 2003
M.H.Chang, J.F.Zhang, G.Groeseneken, and R.Degraeve
“Damaging species for the hole injection induced electron trap generation”
Insulating Films on Semiconductors (INFOS'03), PS-17, Barcelona, 2003.
W.D.Zhang, J.F.Zhang, M.Wood, M.Lalor, D.Burton, G.Groeseneken, and R.Degraeve
“Electron trap generation at different temperatures in the gate oxide”
IEEE 33rd Int. Conf. Semiconductor Interface Specialist Conference (SISC), pp.17.1-17.2, San Diego, 2002
C.Z.Zhao, J.F.Zhang, G.Groeseneken, and R.Degraeve
“Generation of hole traps in oxides under high field stresses”
IEEE 33rd Int. Conf. Semiconductor Interface Specialist Conference (SISC), pp.3.2.1-3.2.2, San Diego, 2002
J.F.Zhang, H.K.Sii, G.Groeseneken, and R.Degraeve
“Generation of hole traps in silicon dioxides”
IEEE 8th Int.Symp. on Physical and Failure Analysis of ICs, pp.50-54, 2001
W.D.Zhang, J.F.Zhang, M.Lalor, D.Burton, G.Groeseneken, and R.Degraeve
“Properties of electron traps generated in the gate oxide”
IEEE 32nd Int. Conf. Semiconductor Interface Specialist Conference (SISC), p7, 2001
J.F.Zhang, H.K.Sii, A.H.Chen, C.Z.Zhao, M.J.Uren, G.Groeseneken and R.Degraeve
“The role of hydrogen in hole trap generation in oxides and oxynitrides”
IEEE 32nd Int. Conf. Semiconductor Interface Specialist Conference (SISC), 2.4, 2001
