A list of recent publications since 2000 in top-quality international journals:
X. F. Zheng, C. Robinson, W.D.Zhang, J.F.Zhang, B. Govoreanu, J. van Houdt
Electron trapping in HfAlO high-κ stack for Flash memory applications: an origin of Vth window closure during cycling operations
accepted for publication in IEEE Trans. Elec. Dev. October 2011.
X. F. Zheng, W. D. Zhang, B. Govoreanu, J. F. Zhang, J. van Houdt
A new multi-pulse technique for probing electron trap energy distribution in high-κ materials for Flash memory application
IEEE Trans. Elec. Dev. vol.57, No.10, pp.2484-2492
D. Ruiz Aguado, B. Govoreanu, W. D. Zhang, M. Jurczak, K. De Meyer, J. van Houdt
A novel trapping/detrapping model for defect profiling in high-k materials using the two-pulse capacitance-voltage technique
IEEE Trans. Elec. Dev. vol. 57, No. 10, pp.2726-2735
X. F. Zheng, W. D. Zhang, B. Govoreanu, D. Ruiz Aguado, J. F. Zhang, J. van Houdt
Energy and Spatial Distribution of Electron Traps throughout SiO2/Al2O3 Stacks as the IPD in Flash Memory Application
IEEE Trans. Electron Dev., vol. 57, No. 1, pp.288-296, 2010.
Z, Ji, J.F.Zhang, W. D. Zhang, G. Groeseneken, L. Pantisano, S. De Gendt, M.M.Heyns
An assessment of the mobility degradation induced by remote charge scattering
Applied Physics Letters, Vol. 95, No. 26, Article number: 263502, 2010
X. F. Zheng, W. D. Zhang, B. Govoreanu, J.F.Zhang, J. van Houdt
A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for Flash memory application
IEDM, 2009.
X. F. Zheng, W. D. Zhang, B. Govoreanu, J.F.Zhang, J. van Houdt,
Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells
Microelectronic Engineering, vol.86, pp.1834–1837, 2009.
W. D. Zhang, B. Govoreanu , X. F. Zheng, D. Ruiz Aguado, M. Rosmeulen, P. Blomme, J. F. Zhang, J. Van Houdt
Two-pulse C-V: A new method for characterizing electron traps in the bulk of SiO2/high-k dielectric stacks
IEEE Electron Device Letters, vol.29, no. 9, pp1043-1046, 2008.
W. D. Zhang, J. F. Zhang, C. Z. Zhao, M. H. Chang, G. Groeseneken, and R. Degraeve
Electrical signature of the defect associated with gate oxide breakdown
IEEE Electron Device Letters, vol.27, no. 5, pp393-395, 2006.
M. H. Chang, J. F. Zhang, and W. D. Zhang
An assessment of capture cross sections and effective density of electron traps generated in silicon dioxides
IEEE Trans. Electron Devices, vol.53, no.6, pp1347-1354, 2006.
Zhang WD, Zhang JF, Lalor MJ, et al.
Effects of detrapping on electron traps generated in gate oxides
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 18 (2): 174-182 FEB 2003
Zhang WD, Zhang JF, Lalor M, et al.
Two types of neutral electron traps generated in the gate silicon dioxide
IEEE TRANSACTIONS ON ELECTRON DEVICES 49 (11): 1868-1875 NOV 2002
Zhang WD, Zhang JF, Lalor M, et al.
On the mechanism of electron trap generation in gate oxides
MICROELECTRONIC ENGINEERING 59 (1-4): 89-94 NOV 2001
Zhang WD, Zhang JF, Uren MJ, et al.
Dependence of energy distributions of interface states on stress conditions
MICROELECTRONIC ENGINEERING 59 (1-4): 95-99 NOV 2001
Zhang WD, Zhang JF, Uren MJ, et al.
On the interface states generated under different stress conditions
APPLIED PHYSICS LETTERS 79 (19): 3092-3094 NOV 5 2001
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